參數(shù)資料
型號(hào)： AM29LV116DB-70EC
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 2M X 8 FLASH 3V PROM, 70 ns, PDSO40
封裝： MO-142CD, TSOP-40
文件頁(yè)數(shù)： 22/44頁(yè)
文件大?。?/td> 863K
代理商： AM29LV116DB-70EC
Am29LV116D
21
Command Definitions
Table 9.
Am29LV116D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE# or CE#
pulse.
PD = Data to be programmed at location PA. Data is latched
on the rising edge of WE# or CE# pulse.
SA = Address of the sector to be erased or verified. Address
bits A20–A13 uniquely select any sector.
Notes:
1. See Table 1 for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Address bits A20–A11 are don’t care for unlock and
command cycles, except when PA or SA is required.
5. No unlock or command cycles required when device is in
read mode.
6. The Reset command is required to return to the read
mode when the device is in the autoselect mode or if DQ5
goes high.
7. The fourth cycle of the autoselect command sequence is
a read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector.
9. Command s valid when device is ready to read array data
or when device is in autoselect mode.
10. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the Unlock
Bypass mode.
12. The system may read and program functions in non-
erasing sectors, or enter the autoselect mode, when n the
Erase Suspend mode. The Erase Suspend command is
valid only during a sector erase operation.
13. The Erase Resume command is valid only during the
Erase Suspend mode.
Command Sequence
(Note 1)
Bus Cycles (Notes 2–4)
Third
First
Second
Fourth
Fifth
Sixth
Addr
RA
Data
RD
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 5)
1
Reset (Note 6)
1
XXX
F0
A
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID,
Top Boot Block
4
555
AA
2AA
55
555
90
X01
C7
Device ID,
Bottom Boot Block
4C
Sector Protect
Verify (Note 8)
4
555
AA
2AA
55
555
90
SA
X02
00
01
CFI Query (Note 9)
1
55
98
Byte Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(Note 10)
2
XXX
A0
PA
PD
Unlock Bypass Reset
(Note 11)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 12)
1
XXX
B0
Erase Resume (Note 13)
1
XXX
30
相關(guān)PDF資料
PDF描述
AM29LV116DB-70EI 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-120 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-120EC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-120EI 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116DB-120FC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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