參數(shù)資料
型號: Am29LV116BT-80RFC
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位)的CMOS 3.0伏,只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 17/40頁
文件大?。?/td> 544K
代理商: AM29LV116BT-80RFC
17
Am29LV116B
P R E L IM IN A R Y
quence should be reinitiated once the device has reset
to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries.
A bit cannot be programmed
from a “0” back to a “1”.
Attempting to do so may halt
the operation and set DQ5 to “1,” or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes to the device faster than using the standard
program command sequence. The unlock bypass com-
mand sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing
the unlock bypass command, 20h. The device then en-
ters the unlock bypass mode. A two-cycle unlock by-
pass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program com-
mand, A0h; the second cycle contains the program ad-
dress and data. Additional data is programmed in the
same manner. This mode dispenses with the initial two
unlock cycles required in the standard program com-
mand sequence, resulting in faster total programming
time. Table 9 shows the requirements for the command
sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t cares for both cycles. The device then returns to
reading array data.
Figure 3 illustrates the algorithm for the program oper-
ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 15 for
timing diagrams
Note:
See Table 9 for program command sequence.
Figure 3.
Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
21359C-6
相關(guān)PDF資料
PDF描述
Am29LV116BT-80RFCB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV116BT-80RFE 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV116BT-80RFEB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV116BT-80RFI 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV116BT-80RFIB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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