參數(shù)資料
型號(hào)： AM29LV116BT-120EI
廠商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 2M X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝： TSOP-40
文件頁(yè)數(shù)： 13/40頁(yè)
文件大小： 544K
代理商： AM29LV116BT-120EI
13
Am29LV116B
P R E L IM IN A R Y
Figure 2.
Temporary Sector Unprotect Operation
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 9 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V
CC
power-up
and power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
21359C-5
相關(guān)PDF資料
PDF描述
Am29LV116BT-120EIB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116BT-120FC 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV116BT-120FCB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV116BT-120FE 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV116BT-120FEB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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