- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366480 > Am29LV116BT-120EEB (Advanced Micro Devices, Inc.) 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | Am29LV116BT-120EEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 40/40頁 |
| 文件大?。?/td> | 544K |
| 代理商： | AM29LV116BT-120EEB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁當前第40頁
Am29LV116B
40
P R E L IM IN A R Y
REVISION SUMMARY
Revision B
Global
Deleted SO package from data sheet.
Revision C
Alternate CE# Controlled Erase/Program
Operations
Changed t
CP
from 45 to 35 ns on 80R and 90 speed
options.
Revision C+1
Global
Changed data sheet status to Preliminary.
Reset Command
Deleted the last paragraph in this section.
Revision C+2
Figure 1, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 21, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million
cycles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV116BT-120EI | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV116BT-120EIB | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116BT-120FC | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV116BT-120FCB | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116BT-120FE | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV116BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DB-70EI | 制造商:Spansion 功能描述: |
| AM29LV116DB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV116DT-70EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8 70ns 40-Pin TSOP |
| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。