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參數(shù)資料
| 型號： | AM29F800BT-70WBD |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 44/44頁 |
| 文件大小： | 702K |
| 代理商： | AM29F800BT-70WBD |
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42
Am29F800B
21504E5
November 2, 2006
DA T A S HE E T
REVISION SUMMARY (Continued)
Revision D (January 1999)
Distinctive Characteristics
Added the 20-year data retention subbullet.
Ordering Information
Optional Processing
: Deleted “B = Burn-in”.
DC Characteristics—TTL/NMOS Compatible
I
LIT
: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
I
LO
, I
CC1
, I
CC2
: Deleted “V
CC
= V
CC
max” in
Test Conditions.
I
CC3
: Added Note 4, “I
CC3
= 20 μA max at extended
temperatures (>+85°C)”.
DC Characteristics—CMOS Compatible
I
LIT
: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
I
CC1
, I
CC2
, I
CC3
: Deleted “V
CC
= V
CC
max”; added
Note 2 “Maximum I
CC
specifications are tested with
V
CC
= V
CC
max”.
Revision D+1 (March 23, 1999)
Command Definitions table
Corrected SA definition in legend; range should be
A18–A12. In Note 4, A17 should be A18.
Revision D+2 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 16, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (August 4, 2000)
Global
Added FBGA package.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs.
Revision E3 (December 22, 2005)
Global
Deleted reverse TSOP package option and 150 ns
speed option.
Revision E4 (May 19, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed t
BUSY
specification to maximium value.
Revision E5 (November 2, 2006)
Deleted “Not recommended for new designs” note.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
Copyright 2004–2006 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade-
marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
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| AM29F800BT-70WBF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-70WBK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-90EC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-90ED | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-90EE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
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| AM29F800BT-90DPE 2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT90DPE2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
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