- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366444 > AM29F800BT-70WBD (Advanced Micro Devices, Inc.) 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29F800BT-70WBD |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導扇區(qū)閃存 |
| 文件頁數(shù)： | 39/44頁 |
| 文件大小： | 702K |
| 代理商： | AM29F800BT-70WBD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁當前第39頁第40頁第41頁第42頁第43頁第44頁
November 2, 2006 21504E5
Am29F800B
37
D AT A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 3)
Unit
Comments
Sector Erase Time
1.0
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time (Note 2)
19
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Word Programming Time
12
500
μs
Chip Programming Time
(Note 2)
Byte Mode
7.2
21.6
s
Word Mode
6.3
18.6
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F800BT-70WBF | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-70WBK | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-90EC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-90ED | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| AM29F800BT-90EE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F800BT-90DPE 2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT90DPE2 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns Die |
| AM29F800BT-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 5V 8MB |
| AM29F800BT-90ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
發(fā)布緊急采購，3分鐘左右您將得到回復。