參數(shù)資料
型號: AM29F400BT-90SK
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),5.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 30/43頁
文件大?。?/td> 548K
代理商: AM29F400BT-90SK
28
Am29F400B
21505E5 November1,2006
D A T A S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
Description
-45
-50
-55
-70
-90
-120
Unit
t
ELFL/
t
ELFH
CE# to BYTE# Switching Low or High
Max
5
ns
t
FLQZ
BYTE# Switching Low to Output HIGH Z
Max
15
15
15
20
20
30
ns
t
FHQV
BYTE# Switching High to Output Active
Min
45
50
55
70
90
120
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
t
ELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
t
ELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FHQV
BYTE#
Switching
from byte
to word
mode
Figure 11.
BYTE# Timings for Read Operations
Note:
Refer to the Erase/Program Operations table for t
AS
and t
AH
specifications.
Figure 12.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
t
HOLD
(t
AH
)
t
SET
(t
AS
)
相關(guān)PDF資料
PDF描述
AM29F400BT-90SK0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F800B-120FE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120EC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120ECB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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