參數(shù)資料
型號(hào)： AM29F400BT-90SK
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512畝x 8-Bit/256畝x 16位），5.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 26/43頁(yè)
文件大?。?/td> 548K
代理商： AM29F400BT-90SK
24
Am29F400B
21505E5 November1,2006
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
5. I
CC3
= 20 μA max at extended temperature (>+85
°
C).
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET#
Input Load Current
V
CC
= V
CC max
;
A9, OE#, RESET# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE# = V
IL
,
OE# =
V
IH
,
f
= 5 MHz, Byte Mode
20
40
mA
CE# = V
IL
,
OE#
= V
IH
,
f
= 5 MHz, Word Mode
28
50
I
CC2
V
CC
Active Write Current
(Notes 2, 3, 4)
CE# = V
IL
, OE#
=
V
IH
30
50
mA
I
CC3
V
CC
Standby Current
(Notes 2, 5
OE# = V
IH
, CE# and RESET# = V
CC
±
0.5 V
0.3
5
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x
V
CC
V
CC
+
0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 5.8 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
0.85
V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.
4
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料
PDF描述
AM29F400BT-90SK0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F800B-120FE 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120EC 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800B-120ECB 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB-120DPC1 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F800BB120SC 制造商:Advanced Micro Devices 功能描述:
AM29F800BB-55EC 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP
AM29F800BB-55EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BB-55EF\\T 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*