- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362256 > AM29F200B-90EEB 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34VS with Lead Free Packaging PDF資料下載
參數(shù)資料
| 型號： | AM29F200B-90EEB |
| 英文描述： | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34VS with Lead Free Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 19/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200B-90EEB |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
Am29F002B/Am29F002NB
19
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.”
Only an erase operation can change
a “0” back to a “1.”
Under this condition, the device
halts the operation, and when the operation has
exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” The system may ignore DQ3 if the
system can guarantee that the time between additional
sector erase commands will always be less than 50
μ
s.
See also the “Sector Erase Command Sequence”
section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been
accepted. Table 6 shows the outputs for DQ3.
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 5.
Toggle Bit Algorithm
(Notes
1, 2)
(Note 1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-90EI | x8/x16 Flash EEPROM |
| AM29F200B-90FC | 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3803S with Lead Free Packaging |
| AM29F200B-90FE | x8/x16 Flash EEPROM |
| AM29F200B-90FEB | 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF540N with Standard Packaging |
| AM29F200B-90FI | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL1404ZL with Standard Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。