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參數(shù)資料
| 型號： | AM29F200B-150EE |
| 英文描述： | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ46ZL with Standard Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 11/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200B-150EE |
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Am29F002B/Am29F002NB
11
Sector protection/unprotection must be implemented
using programming equipment. The procedure
requires a high voltage (V
ID
) on address pin A9 and the
control pins. Details on this method are provided in the
supplements, publication numbers 20819
(Am29F002B) and 21183 (Am29F002NB). Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Temporary Sector Unprotect
Note:
This feature requires the RESET# pin and is
therefore not available on the Am29F002NB.
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the
RESET# pin to V
ID
. During this mode, formerly pro-
tected sectors can be programmed or erased by
selecting the sector addresses. Once V
ID
is removed
from the RESET# pin, all the previously protected
sectors are protected again. Figure 1 shows the algo-
rithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.
Figure 1.
Temporary Sector Unprotect Operation
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by
spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Unprotect
Completed (Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-150EEB | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ46ZL with Lead Free Packaging |
| AM29F200B-150EI | 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3303 with Lead Free Packaging |
| AM29F200B-150FC | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1405ZL with Lead Free Packaging |
| AM29F200B-150FE | A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6609 with Standard Tape and Reel Quantity of 4800 |
| AM29F200B-150FEB | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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