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參數(shù)資料
| 型號： | AM29F200B-120FC |
| 英文描述： | 40V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRL1404ZS with Standard Packaging |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 16/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200B-120FC |
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16
Am29F002B/Am29F002NB
Command Definitions
Table 5.
Am29F002B/Am29F002NB Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A13 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Address bits A17–A11 are don’t cares for unlock and
command cycles, except when PA or SA is required.
5. No unlock or command cycles required when reading array
data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a
read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
9. The system may read and program n non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
10. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–4)
Third
Addr
Data Addr
First
Second
Addr
Fourth
Fifth
Sixth
Addr
RA
XXX
555
Data
RD
F0
AA
Data
Data
Addr Data
Addr
Data
Read (Note 5)
Reset (Note 6)
1
1
4
Auto-
select
(Note 7)
Manufacturer ID
Device ID,
Top Boot Block
Device ID,
Bottom Boot Block
2AA
55
555
90
X00
01
4
555
AA
2AA
55
555
90
X01
B0
4
555
AA
2AA
55
555
90
X01
34
Sector Protect Verify
(Note 8)
4
555
AA
2AA
55
555
90
(SA)
X02
00
01
PD
AA
AA
Program
Chip Erase
Sector Erase
Erase Suspend (Note 9)
Erase Resume (Note 10)
4
6
6
1
1
555
555
555
XXX
XXX
AA
AA
AA
B0
30
2AA
2AA
2AA
55
55
55
555
555
555
A0
80
80
PA
555
555
2AA
2AA
55
55
555
SA
10
30
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-120FE | 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3410 with Standard Packaging |
| AM29F200B-120FEB | x8/x16 Flash EEPROM |
| AM29F200B-120FI | 150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package; A IRFB4019PBF with Standard Packaging |
| AM29F200B-120SC | x8/x16 Flash EEPROM |
| AM29F200B-120SE | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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