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參數(shù)資料
| 型號： | AM29F200B-120SC |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | x8/x16閃存EEPROM |
| 文件頁數(shù)： | 1/39頁 |
| 文件大?。?/td> | 728K |
| 代理商： | AM29F200B-120SC |
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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21527
Issue Date:
November 28, 2000
Rev:
D
Amendment/
0
Am29F002B/Am29F002NB
2 Megabit (256 K x 8-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 Volt-only operation for read, erase, and
program operations
— Minimizes system level requirements
I
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F002 device
I
High performance
— Access times as fast as 55 ns
I
Low power consumption (typical values at
5 MHz)
— 1 μA standby mode current
— 20 mA read current
— 30 mA program/erase current
I
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Top or bottom boot block configurations available
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
I
Minimum 1,000,000 write cycle guarantee per
sector
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package option
— 32-pin PDIP
— 32-pin TSOP
— 32-pin PLCC
I
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
I
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
I
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data (not available on Am29F002NB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F200B-120SE | x8/x16 Flash EEPROM |
| AM29F200B-120SEB | x8/x16 Flash EEPROM |
| AM29F200B-120SI | 12V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7476 with Lead Free Packaging |
| AM29F200B-150EC | 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7807A with Lead Free Packaging |
| AM29F200B-150EE | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ46ZL with Standard Packaging |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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