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參數(shù)資料
| 型號： | AM29F080B-120ED |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 8兆位（1米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 3/39頁 |
| 文件大小： | 517K |
| 代理商： | AM29F080B-120ED |
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DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21503
Issue Date:
November 1, 2006
Rev:
G
Amendment:
5
Am29F080B
8 Megabit (1 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
■
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F080 device
■
High performance
— Access times as fast as 55 ns
■
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 μA typical standby current (standard access
time to active mode)
■
Flexible sector architecture
— 16 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
■
Minimum 1,000,000 program/erase cycles per
sector guaranteed
■
20-year data retention at 125
°
C
— Reliable operation for the life of the system
■
Package options
— 40-pin TSOP
— 44-pin SO
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
■
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
■
Command sequence optimized for mass storage
— Specific addresses not required for unlock cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F080B-70ED | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-70EE | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-70EF | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-70EK | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F080B-70SD | 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F080B-120EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 120ns 40-Pin TSOP |
| AM29F080B-120SC | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC |
| AM29F080B-120SC/T | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8 120NS 44SOIC - Rail/Tube |
| AM29F080B-55EF | 功能描述:閃存 8M (1MX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F080B-70EC | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,TSSOP,40PIN,PLASTIC |
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