參數(shù)資料
型號： AM29F080B-120ED
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 8兆位（1米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 24/39頁
文件大?。?/td> 517K
代理商： AM29F080B-120ED
22
Am29F080B
21503G5 November1,2006
D AT A S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
CMOS Compatible
Notes for DC Characteristics (both tables):
1. The I
CC
current listed includes is typically less than 1 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Program or Embedded Erase algorithm is in progress.
4. Not 100% tested.
5. For CMOS mode only, I
CC3
= I
CC4
= 20 μA max at extended temperatures (> +85°C).
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
±
1.0
Unit
I
LI
I
LIT
I
LO
I
CC1
I
CC2
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL
,
OE# = V
IH
CE#
=
V
IL
,
OE#
=
V
IH
μA
A9 Input Load Current
50
±
1.0
μA
Output Leakage Current
μA
V
CC
Read Current (Notes 1, 2)
V
CC
Write Current (Notes 2, 3, 4)
V
CC
Standby Current
(CE# Controlled) (Notes 2, 5)
25
40
mA
30
40
mA
I
CC3
CE# = V
IH
, RESET#
=
V
IH
0.4
1.0
mA
I
CC4
V
CC
Standby Current
(RESET# Controlled) (Notes 2, 5)
RESET# = V
IL
0.4
1.0
mA
V
IL
V
IH
Input Low Level
–0.5
0.8
V
Input High Level
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Sector
Protect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA V
CC
= V
CC
Min
0.45
V
Output High Level
2.4
V
Low V
CC
Lock-out Voltage
3.2
4.2
V
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
±
1.0
Unit
I
LI
I
LIT
I
LO
I
CC1
I
CC2
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
CE#
= V
IL,
OE#
= V
IH
CE#
=
V
CC
±
0.5 V,
RESET#
=
V
CC
±
0.5 V
μA
A9 Input Load Current
50
±
1.0
μA
Output Leakage Current
μA
V
CC
Read Current (Notes 1, 2)
V
CC
Write Current (Notes 2, 3, 4)
V
CC
Standby Current (CE#
Controlled) (Notes 2, 5)
25
40
mA
30
40
mA
I
CC3
1
5
μA
I
CC4
V
CC
Standby Current (RESET#
Controlled) (Notes 2, 5)
RESET# = V
SS
±
0.5 V
1
5
μA
V
IL
V
IH
Input Low Level
–0.5
0.8
V
Input High Level
0.7x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect
and Sector Protect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
I
OH
= –100 μA, V
CC
= V
CC
Min
0.45
V
Output High Voltage
0.85 V
CC
V
CC
– 0.4
3.2
V
V
Low V
CC
Lock-out Voltage
4.2
V
相關PDF資料
PDF描述
AM29F080B-70ED 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
AM29F080B-120EF 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 120ns 40-Pin TSOP
AM29F080B-120SC 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC
AM29F080B-120SC/T 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8 120NS 44SOIC - Rail/Tube
AM29F080B-55EF 功能描述:閃存 8M (1MX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F080B-70EC 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,TSSOP,40PIN,PLASTIC
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