參數(shù)資料
型號(hào): AM29F040B-120EK
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
封裝: LEAD FREE, MO-142BD, TSOP-32
文件頁(yè)數(shù): 35/36頁(yè)
文件大?。?/td> 534K
代理商: AM29F040B-120EK
November1,2006 21445E5
Am29F040B
33
D A T A S H E E T
REVISION SUMMARY
Revision A (May 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
Revision B+1 (January 1998)
AC Characteristics, Erase and Program Operations
Added Note references to t
WHWH1
. Corrected the pa-
rameter symbol for V
CC
Set-up Time to t
VCS
; the
specification is 50 μs minimum. Deleted the last row in
table.
Revision B+2 (April 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability to the -55 and
-70 speed options.
AC Characteristics
Erase and Program Operations; Erase and Program
Operations Alternate CE# Controlled Writes:
Corrected
the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Corrected the note
reference for t
VCS
. This parameter is not 100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added 20-year data retention bullet.
DC Characteristics—TTL/NMOS Compatible
V
OH
: Changed the parameter description to “Output
High Voltage” from Output High Level”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
: Added Note 2 “Maximum I
CC
specifi-
cations are tested with V
CC
= V
CCmax
”.
I
CC3
: Deleted V
CC
= V
CC
Max.
Revision C+1 (February 1999)
Command Definitions
Command Definitions table:
Deleted “XX” from the
fourth cycle data column of the Sector Protect Verify
command.
Revision C+2 (May 17, 1999)
Test Specifications Table
Corrected the input and output measurement entries in
the “All others” column.
Revision D (November 15, 1999)
AC Characteristics—Figure 9. Program Operations
Timing and Figure 10. Chip/Sector Erase
Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E0 (November 29, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
Revision E1 (October 4, 2004)
Added PB-Free option to Standard Ordering Matrix.
Updated Valid Combinations
Revision E2 (July 18, 2005)
Ordering Information
In valid combinations list, added the following: Pb-free
options JD, JF, JK to set of -55 and -70 speed options;
Pb-free options PD, PF, PK, JD, JF, JK to the set of -90,
-120, and -150 speed options.
Revision E3 (January 31, 2006)
Global
Removed 150 speed option from document.
Removed 32-pin Reverse TSOP diagrams and all ref-
erences from Ordering Information.
Revision E4 (May 18, 2006)
Added migration and obsolescence information.
Revision E5 (November 1, 2006)
Deleted migration and obsolescence text.
相關(guān)PDF資料
PDF描述
AM29F040B-120JD 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JF 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120JK 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120PD 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120PE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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AM29F040B-120JC\T 制造商:Advanced Micro Devices 功能描述:IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC, TandR
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