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參數(shù)資料
| 型號： | AM29F040B-120EK |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 120 ns, PDSO32 |
| 封裝： | LEAD FREE, MO-142BD, TSOP-32 |
| 文件頁數(shù)： | 30/36頁 |
| 文件大?。?/td> | 534K |
| 代理商： | AM29F040B-120EK |
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28
Am29F040B
21445E5
November 1, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for -55), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table
4
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ
(Note
1)
Max
(Note
2)
Unit
Comments
Sector Erase Time
1
8
sec
Excludes 00h programming prior to erasure (Note
4)
Chip Erase Time
8
64
sec
Byte Programming Time
7
300
μs
Excludes system-level overhead (Note
5)
Chip Programming Time (Note
3)
3.6
10.8
sec
Min
Max
Input Voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
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PDF描述 |
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| AM29F040B-120JD | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120JF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120JK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120PD | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120PE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B120JC | 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: |
| AM29F040B-120JC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin PLCC 制造商:Advanced Micro Devices 功能描述: 制造商:Spansion 功能描述:IC, FLASH MEM, 4MBIT, 120NS, 32-PLCC, Memory Type:Flash - NOR, Memory Size:4Mbit 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC 制造商:Advanced Micro Devices 功能描述:IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC, TandR |
| AM29F040B-120JC\T | 制造商:Advanced Micro Devices 功能描述:IC,EEPROM,NOR FLASH,512KX8,CMOS,LDCC,32PIN,PLASTIC, TandR |
| AM29F040B-120JD | 制造商:Spansion 功能描述:FLASH 5V 4MB SMD 29F040 PLCC32 |
| AM29F040B-120JF | 制造商:Spansion 功能描述:IC FLASH 4MB SMD 29F040 PLCC32 |
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