參數(shù)資料
型號(hào): Am29F016D-120EIB
廠商: Advanced Micro Devices, Inc.
英文描述: BLADE #24 ANGLE DEBURRING 5PC
中文描述: 16兆位(2米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁(yè)數(shù): 31/45頁(yè)
文件大?。?/td> 1145K
代理商: AM29F016D-120EIB
30
Am29F016D
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase And Programming Performance” section for more information.
Parameter
Parameter Description
Speed Options
Unit
JEDEC
Std
-70
-90
-120
-150
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
90
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
40
45
50
50
ns
t
DVWH
t
DS
Data Setup Time
Min
40
45
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
(OE# high to WE# low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
40
45
50
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation (Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
Max
8
sec
t
VCS
V
CC
Set Up Time (Note 1)
Min
50
μs
t
BUSY
WE# to RY/BY# Valid
Min
40
40
50
60
ns
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Am29F016D-120FIB 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F016D-150FIB 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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