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參數(shù)資料
| 型號(hào)： | AM29F016-75SIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel |
| 中文描述： | 16兆位（2097152 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 30/36頁 |
| 文件大小： | 219K |
| 代理商： | AM29F016-75SIB |
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Am29F016
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected once again.
Figure 15.
Temporary Sector Group Unprotect Algorithm
18805D-17
Figure 13.
RY/BY Timing Diagram During Program/Erase Operations
CE
WE
RY/BY
t
BUSY
Entire programming
or erase operations
The rising edge of the last WE signal
18805D-18
Figure 14.
RESET Timing Diagram
RESET
t
Ready
t
RP
Start
Perform Erase or
Program Operations
RESET = V
IH
Temporary Sector Group
Unprotect Completed
(Note 2)
RESET = V
ID
(Note 1)
18805D-21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016-75FIB | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F016-90 | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F016B-120DGC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DGI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016-90EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-120DGC1 | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F016B-120DPC1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
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