參數(shù)資料
型號(hào): AM29F016-75SIB
廠商: Advanced Micro Devices, Inc.
英文描述: LM3311 Step-Up PWM DC/DC Converter with Integrated LDO, Op-Amp, and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel
中文描述: 16兆位(2097152 × 8位)的CMOS 5.0伏只,扇區(qū)擦除閃存
文件頁數(shù): 29/36頁
文件大?。?/td> 219K
代理商: AM29F016-75SIB
Am29F016
29
SWITCHING WAVEFORMS
18805D-15
Figure 11.
AC Waveforms for Data Polling During Embedded Algorithm Operations
DQ0–DQ7
Valid Data
t
CH
t
OEH
t
OE
t
CE
t
WHWH 1 or 2
DQ7 =
Valid Data
High Z
CE
OE
WE
DQ7
t
OH
t
DF
DQ7
DQ0–DQ6
DQ0–DQ6 = Invalid
*DQ7 = Valid Data (The device has completed the Embedded opera-
tion).
*
18805D-16
Figure 12.
AC Waveforms for Toggle Bit I During Embedded Algorithm Operations
CE
t
OEH
WE
OE
*DQ6 stops toggling (The device has completed the Embedded operation).
DQ6 =
Stop Toggling
DQ0–DQ7
Valid
DQ6 = Toggle
DQ6 = Toggle
Data (DQ0–DQ7)
*
t
OE
相關(guān)PDF資料
PDF描述
AM29F016-75FIB 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016-90 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016B-120DGC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DPC1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
AM29F016B-120DGI1 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F016-90EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP
AM29F016B-120DGC1 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F016B-120DPC1 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die
AM29F016B120EC 制造商:Advanced Micro Devices 功能描述:
AM29F016B-120EC 制造商:Advanced Micro Devices 功能描述: