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參數資料
| 型號： | AM29DS163DB100WAIN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只，同時作業(yè)快閃記憶體 |
| 文件頁數： | 48/50頁 |
| 文件大?。?/td> | 1682K |
| 代理商： | AM29DS163DB100WAIN |
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48
Am29DS163D
A D V A N C E I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 2.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.2 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 14 on page 27
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 2.0 V, one pin at a time.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
2
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
78
sec
Byte Program Time
9
270
μs
Excludes system level
overhead (Note 5)
Word Program Time
13
340
μs
Accelerated Byte/Word Program Time
7
210
μs
Chip Program Time
(Note 3)
Byte Mode
28
80
sec
Word Mode
14
40
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
11 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
125
°
C
10
Years
20
Years
相關PDF資料 |
PDF描述 |
|---|---|
| AM29DS163D | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| Am29DS163DB100 | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAE | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAEN | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS163DB100WAF | 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
相關代理商/技術參數 |
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|---|---|
| AM29DS163DT100WAI | 制造商:Advanced Micro Devices 功能描述: |
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| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
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