參數(shù)資料
型號(hào)： AM29DS163DB100WAF
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述： 16兆位的CMOS 1.8伏只，同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù)： 12/50頁(yè)
文件大?。?/td> 1682K
代理商： AM29DS163DB100WAF
12
Am29DS163D
A D V A N C E I N F O R M A T I O N
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC
+
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when
addresses are changed. While in sleep mode, output
data is latched and always available to the system.
I
CC4
in the
“DC Characteristics” on page 33
represents
the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the
RESET# pin is driven low for at least a period of t
RP
,
the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
SS
±0.3 V, the device
draws CMOS standby current (I
CC4
). If RESET# is held
at V
IL
but not within V
SS
±0.3 V, the standby current is
greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t
READY
(during Embedded Algorithms). The sys-
tem can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
READY
(not during Embedded Algo-
rithms). The system can read data t
RH
after the
RESET# pin returns to V
IH
.
Refer to
“AC Characteristics” on page 36
for RESET#
parameters and to
Figure 14, on page 37
for the timing
diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high
impedance state.
Table 2. Am29DS163D Device Bank Divisions
Device
Part Number
Bank 1
Bank 2
Megabits
Sector Sizes
Megabits
Sector Sizes
Am29DS163D
4 Mbit
Eight 8 Kbyte/4 Kword,
seven 64 Kbyte/32 Kword
12 Mbit
Twenty-four
64 Kbyte/32 Kword
相關(guān)PDF資料
PDF描述
AM29DS163DB100WAFN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB100WAI 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
Am29DS163DT120 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DT120WAE 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DT120WAEN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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