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參數(shù)資料
| 型號： | AM29DL322GT70WMIN |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封裝： | 6 X 12 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁數(shù)： | 19/53頁 |
| 文件大?。?/td> | 1448K |
| 代理商： | AM29DL322GT70WMIN |
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26
Am29DL32xG
March 26, 2004
AD V A NCE
I N FO RM ATI O N
Refer to the Write Operation Status section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Re-
sume command are ignored. Another Erase Suspend
command can be written after the chip has resumed
erasing.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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