參數(shù)資料
型號(hào): AM28F512
廠商: Advanced Micro Devices, Inc.
英文描述: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整體擦除閃速存儲(chǔ)器)
中文描述: 512千比特(64畝× 8位)的CMOS 12.0伏,整體擦除閃存(12V的,的CMOS為512k位整體擦除閃速存儲(chǔ)器)
文件頁(yè)數(shù): 16/35頁(yè)
文件大?。?/td> 484K
代理商: AM28F512
16
Am28F512
Figure 3.
Flashrite
Programming Algorithm
Start
Apply V
PPH
PLSCNT = 0
Write Program Setup Command
Write Program Command (A/D)
Time out 10 μs
Write Program Verify Command
Time out 6 μs
Read Data from Device
Last Address
Write Reset Command
Apply V
PPL
Programming Completed
PLSCNT =
25
Increment Address
Apply V
PPL
Device Failed
No
11559G-8
Yes
Yes
No
No
Verify Byte
Increment PLSCNT
Yes
相關(guān)PDF資料
PDF描述
AM28F512-120PC 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70
AM28F512-120PCB 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70
AM28F512-120PE 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70
AM28F512-120PEB 8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70
AM28F512-150JIB 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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