參數(shù)資料
型號(hào): AM28F512
廠商: Advanced Micro Devices, Inc.
英文描述: 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整體擦除閃速存儲(chǔ)器)
中文描述: 512千比特(64畝× 8位)的CMOS 12.0伏,整體擦除閃存(12V的,的CMOS為512k位整體擦除閃速存儲(chǔ)器)
文件頁(yè)數(shù): 12/35頁(yè)
文件大?。?/td> 484K
代理商: AM28F512
12
Am28F512
Figure 1.
Flasherase
Electrical Erase Algorithm
Start
Program All Bytes to 00h
Apply V
PPH
Address = 00h
PLSCNT = 0
Write Erase Setup Command
Write Erase Command
Time out 10 ms
Write Erase Verify
Time out 6 μs
Read Data from Device
Data = FFh
Last Address
Write Reset Command
Apply V
PPL
Erasure Completed
PLSCNT =
1000
Increment Address
Apply V
PPL
Erase Error
No
Yes
No
11559G-6
Yes
Yes
Yes
No
No
Increment
PLSCNT
Data = 00h
相關(guān)PDF資料
PDF描述
AM28F512-120PC 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70
AM28F512-120PCB 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70
AM28F512-120PE 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70
AM28F512-120PEB 8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70
AM28F512-150JIB 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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