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參數(shù)資料
| 型號(hào)： | AM28F256A-200FIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | Octal bus transceivers and registers 24-SOIC 0 to 70 |
| 中文描述： | 256千比特（32畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁(yè)數(shù)： | 29/35頁(yè) |
| 文件大?。?/td> | 456K |
| 代理商： | AM28F256A-200FIB |
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Am28F256A
29
AC CHARACTERISTICS—WRITE/ERASE/PROGRAM OPERATIONS
Alternate CE
#
Controlled Writes
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2.
Embedded program operation of 14 μs consists of 10 μs program pulse and 4 μs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Parameter Symbols
Parameter Description
Am28F256A Speed Options
Unit
JEDEC
Standard
-70
-90
-120
-150
-200
t
AVAV
t
WC
Write Cycle Time (Note 4)
Min
70
90
120
150
200
ns
t
AVEL
t
AS
Address Setup Time
Min
0
0
0
0
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
50
60
75
ns
t
DVEH
t
DS
Data Setup Time
Min
45
45
50
50
50
ns
t
EHDX
t
g
Data Hold Time
Min
10
10
10
10
10
ns
t
OEH
Output Enable Hold Time for
Embedded Algorithm only
Min
10
10
10
10
10
ns
t
GHEL
Read Recovery Time Before Write
Min
0
0
0
0
0
μs
t
WLEL
t
WS
WE
#
Setup Time by CE
#
Min
0
0
0
0
0
ns
t
EHWK
t
WH
WE
#
Hold Time
Min
0
0
0
0
0
ns
t
ELEH
t
CP
Write Pulse Width
Min
65
65
70
80
80
ns
t
EHEL
t
CPH
Write Pulse Width HIGH
Min
20
20
20
20
20
ns
t
EHEH3
Embedded Programming Operation
(Note 2)
Min
14
14
14
14
14
μs
t
EHEH4
Embedded Erase Operation (Note 3)
Typ
5
5
5
5
5
sec
t
VPEL
V
PP
Setup Time to Chip Enable LOW
(Note 4)
Min
100
100
100
100
100
ns
t
VCS
V
CC
Setup Time to Chip Enable LOW
(Note 4)
Min
50
50
50
50
50
μs
t
VPPR
V
PP
Rise Time 90% V
PPH
(Note 4)
Min
500
500
500
500
500
ns
t
VPPF
V
PP
Fall Time 90% V
PPL
(Note 4)
Min
500
500
500
500
500
ns
t
LKO
V
CC
< V
LKO
to Reset (Note 4)
Min
100
100
100
100
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F256A-200JC | Octal bus transceivers and registers 24-SOIC 0 to 70 |
| AM28F256A-200JCB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200JE | Octal bus transceivers and registers 24-PDIP 0 to 70 |
| AM28F256A-200JEB | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200JI | 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F256A-200JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200JCB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200JE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200JEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F256A-200JI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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