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參數(shù)資料
| 型號(hào)： | AM27C256-55DIB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
| 中文描述： | 32K X 8 UVPROM, 55 ns, CDIP28 |
| 封裝： | WINDOWED, CERAMIC, DIP-28 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | AM27C256-55DIB |
AMD
2-38
Am27C256
Output OR-Tieing
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
I
Low memory power dissipation
I
Assurance that output bus contention will not occur
It is recommended that
CE
be decoded and used as the
primary device-selecting function, while
OE
be made a
common connection to all devices in the array and con-
nected to the READ line from the system control bus.
This assures that all deselected memory devices are in
low-power standby mode and that the output pins are
only active when data is desired from a particular
memory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the rising
and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1-
μ
F ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
CC
and V
SS
to minimize transient effects. In addition, to
overcome the voltage drop caused by the inductive ef-
fects of the printed circuit board traces on EPROM ar-
rays, a 4.7-
μ
F bulk electrolytic capacitor should be used
between V
CC
and V
SS
for each eight devices. The loca-
tion of the capacitor should be close to where the power
supply is connected to the array.
MODE SELECT TABLE
CE
OE
A0
A9
V
PP
Outputs
Read
V
IL
V
IL
X
X
X
D
OUT
Output Disable
X
V
IH
X
X
X
High-Z
Standby (TTL)
V
IH
X
X
X
X
High-Z
Standby (CMOS)
V
CC
+ 0.3 V
X
X
X
X
High-Z
Program
V
IL
V
IH
X
X
V
PP
D
IN
Program Verify
V
IH
V
IL
X
X
V
PP
D
OUT
Program Inhibit
V
IH
V
IH
X
X
V
PP
High-Z
Manufacturer
Code
V
IL
V
IL
V
IL
V
H
X
01H
Device Code
V
IL
V
IL
V
IH
V
H
X
10H
Auto Select
(Note 3)
Mode
Pins
Notes:
1. V
H
= 12.0 V + 0.5 V
2. X = Either V
IH
or V
IL
3. A1–A8 = A10–A14
= V
IL
4. See DC Programming Characteristics for V
PP
voltage during programming.
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PDF描述 |
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| AM27C256-255DIB | 256 Kilobit (32 K x 8-Bit) CMOS EPRO |
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| AM27C256-200EI | 256 Kilobit (32,768 x 8-Bit) CMOS EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM27C25655JC | 制造商:AMD 功能描述:* |
| AM27C256-55PC | 制造商:Rochester Electronics LLC 功能描述: |
| AM27C25670JC | 制造商:AMD 功能描述:New |
| AM27C256-90DI | 制造商:Rochester Electronics LLC 功能描述: |
| AM27C256-90JC | 制造商:Advanced Micro Devices 功能描述:EPROM, 32K x 8, 32 Pin, Plastic, PLCC |
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