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參數(shù)資料
| 型號(hào)： | AM27C040-90DIB |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | CRIMP SOCKET, 0.5-1.5; Connector type:Circular; Termination method:Crimp; Plating, contact:Silver; Series:C163; Contact style:Socket; Area, wire size min:0.5mm2; Area, wire size max:1.5mm2; Diameter, cable max:2.8mm; Diameter, cable RoHS Compliant: Yes |
| 中文描述： | 512K X 8 UVPROM, 90 ns, CDIP32 |
| 封裝： | WINDOWED, CERAMIC, DIP-32 |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | AM27C040-90DIB |
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6
Am27C040
F I N A L
common connection to all devices in the array and con-
nected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1
μF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
CC
and V
SS
to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 μF bulk electrolytic capacitor should be used
between V
CC
and V
SS
for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Note:
1. V
H
= 12.0 V
±
0.5 V.
2. X = Either V
IH
or V
IL
3.
A1 – A8 = A10 – A18 = V
IL
4. See DC Programming Characteristics in the EPROM Products Data Book for V
PP
voltage during programming
Mode
CE#/PGM#
OE#
A0
A9
V
PP
Outputs
Read
V
IL
V
IL
X
X
X
D
OUT
Output Disable
V
IL
V
IH
X
X
X
HIGH Z
Standby (TTL)
V
IH
X
X
X
X
HIGH Z
Standby (CMOS)
V
CC
+ 0.3 V
X
X
X
X
HIGH Z
Program
V
IL
V
IH
X
X
V
PP
D
IN
Program Verify
V
IL
V
IL
X
X
V
PP
D
OUT
Program Inhibit
V
IH
X
X
X
V
PP
HIGH Z
Auto Select
(Note 3)
Manufacturer Code
V
IL
V
IL
V
IL
V
H
X
01h
Device Code
V
IL
V
IL
V
IH
V
H
X
9Bh
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM27C040-90JC | 4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C040-90JE | 4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C040-90JI | 4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C040-90PC | 4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C040-90PE | SEAL,NEOPRENE,CYLINDRICAL CONNECTR& |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM27C040-90EC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| AM27C040-90EI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| AM27C040-90JC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C040-90JE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:4 Megabit (512 K x 8-Bit) CMOS EPROM |
| AM27C040-90JI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:4 Megabit (512 K x 8-Bit) CMOS EPROM |
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