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參數(shù)資料
| 型號： | AM1517-012 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & Microwave Transistors Satellite Communications Applications(用于衛(wèi)星通信的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 86K |
| 代理商： | AM1517-012 |
September 1992
SATELLITE COMMUNICATIONS APPLICATIONS
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
∞
:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
12 W MIN. WITH 8.5 dB GAIN
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermeticallysealed
DESCRIPTION
The AM1517-012 power transistor isdesigned spe-
cifically for Satellite communications applications
in the 1.5
1.7 GHz frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a Refractory/Gold metallization system.
The AM1517-012 is supplied in the AMPAC
Her-
metic/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
BRANDING
1517-12
ORDER CODE
AM1517-012
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
V
CC
T
J
T
STG
Parameter
(T
C
≤
100
°
C)
Value
27
1.25
30
Unit
W
A
V
°
C
°
C
Power Dissipation*
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
200
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
5.5
°
C/W
*Applies only to rated RFamplifier operation
AM1517-012
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/6
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AM1517-025 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS |
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| AM151812F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:HIGH CONTACT CAPACITY, PRECISE OPERATION |
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