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參數(shù)資料
| 型號(hào)： | AM1517-025 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | AM1517-025 |
1/8
May 2000
AM1517-025
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
SO42
hermetically sealed
ORDER CODE
AM1517-025
BRANDING
1517-25
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞
:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METALLIC/CERAMIC HERMETIC PACKAGE
P
OUT
= 25 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM1517-025 power transistor is designed
specifically for Satellite communications applica-
tions in the 1.5 - 1.7 frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞
:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing a
refractory/Gold metallization system.
The AM1517-025 is supplied in the AMPAC
TM
Hermetic/Ceramic package with internal Input/
Output matching structures.
PIN CONNECTION
1
4
3
2
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
0
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation* ( Tc
≤
50
0
C)
45
W
I
C
Device Current*
2.5
A
V
CC
Collector-Supply Voltage*
30
V
T
j
Junction Temperature
200
0
C
T
STG
Storage Temperature
-65 to +200
0
C
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance*
3.3
0
C/W
* Applies only to rated RF amplifier operation
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