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參數(shù)資料
| 型號： | AM1214-130 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, M259, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | AM1214-130 |
AM1214-130
2/4
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC
DYNAMIC @ 150 MICROSEC / 10 %
DYNAMIC @ 500 MICROSEC / 10 %
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 20 mA
IE = 0 mA
70
V
BVCES
IC = 20 mA
VBE = 0 V
70
V
BVEBO
IE = 10 mA
IC = 0 mA
3.5
V
ICES
VCE = 40 V
VBE = 0 V
5mA
hFE
VCE = 5 V
IC = 0.25 A
10
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f = 1215 - 1400 MHz
PIN = 20 W
VCC = 50 V
130
160
W
ηC
f = 1215 - 1400 MHz
PIN = 20 W
VCC = 50 V
40
45
%
GP
f = 1215 - 1400 MHz
PIN = 20 W
VCC = 50 V
8.1
9.0
dB
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT
f = 1215 - 1400 MHz
PIN = 20 W
VCC = 50 V
110
140
W
ηC
f = 1215 - 1400 MHz
PIN = 20 W
VCC = 50 V
40
45
%
GP
f = 1215 - 1400 MHz
PIN = 20 W
VCC = 50 V
7.4
8.45
dB
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM1214-175 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| AM1214-200 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| AM1214-250 | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| AM1214-300 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| AM1214-325 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
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