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參數(shù)資料
| 型號(hào)： | AM1214-6 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, HERMETIC SEALED PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 22K |
| 代理商： | AM1214-6 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
55
V
BVCER
IC = 40 mA
RBE = 10
55
V
BVEBO
IE = 2.0 mA
3.5
V
ICES
VCE = 28 V
10
mA
hFE
VCE = 5.0 V
IC = 2.0 A
15
150
---
PG
ηηηη
C
VCC = 28 V
POUT = 55 W
f = 1214 to 1400 MHz
Pulse Width = 1000
S
Duty Cycle = 10%
6.6
50
7.2
55
dB
%
PACKAGE - .400 x .400 2NLFL
1 = COLLECTER
3 = EMITTER
2 & 4 = BASE
RF POWER TRANSISTOR
AM1214-6
DESCRIPTION:
The
ASI 1214-6 is a Common Base
Transistor Designed for
Long Pulse High Reliability L-Band
Radar Applications.
FEATURES INCLUDE:
Gold Metallization
Hermetic Package
Input/Output Matching
MAXIMUM RATINGS
IC
5.0 A
VCB
55 V
PDISS
125 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
1.4
OC/W
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