參數(shù)資料
型號： AH115-S8G
元件分類： 放大器
英文描述： 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝： GREEN, MS-012, SMT, SOIC-8
文件頁數(shù)： 1/5頁
文件大小： 241K
代理商： AH115-S8G
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 5
March 2008
AH115
Watt, High Linearity InGaP HBT Amplifier
Product Features
1800 – 2300 MHz
+14 dB Gain @ 1960 MHz
28.5 dBm P1dB
+44 dBm Output IP3
+5V Single Positive Supply
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH115 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrow-band
tuned application circuits with up to +44 dBm OIP3 and
+28.5 dBm of compressed 1-dB power. All devices are
100% RF and DC tested. The AH115 is available in lead-
free/green/RoHS-compliant SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 to maintain high linearity over temperature and
operate directly off a +5 V supply.
This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications
(1)
Parameters
Units
Min
Typ
Max
Operational Bandwidth
MHz
1800
2300
Test Frequency
MHz
2140
Gain
dB
12.5
14.4
Input Return Loss
dB
23
Output Return Loss
dB
8
Output P1dB
dBm
+26.5
+28.5
Output IP3
(2)
dBm
+41
+42
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
dBm
+22.5
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
dBm
+20
Noise Figure
dB
5.3
Operating Current Range
(3)
mA
200
250
300
Device Voltage
V
+5
1. Test conditions unless otherwise noted. 25 C, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150
°C
RF Input Power (continuous)
+22 dBm
Device Voltage
+8 V
Device Current
400 mA
Device Power
2 W
Thermal Resistance, Rth
62
°C/W
Junction Temperature
+200
°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameters
Units
Typical
Frequency
MHz
1960
2140
Gain
dB
14.3
14.4
S11
dB
-12
-23
S22
dB
-8
Output P1dB
dBm
+28.3
+28.5
Output IP3
(2)
dBm
+44
+42
IS-95A Channel Power
@ -45 dBc ACPR,
dBm
+22.5
W-CDMA Channel Power
@ -45 dBc ACLR
dBm
+20
Noise Figure
dB
5
5.3
Supply Bias
+5 V @ 250 mA
4. Typical parameters reflect performance in a tuned application circuit at +25
°C.
Ordering Information
Part No.
Description
AH115-S8G
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH115-S8PCB1960
1960 MHz Evaluation Board
AH115-S8PCB2140
2140 MHz Evaluation Board
Standard tape / reel size = 500 pieces on a 7” reel
1
2
3
4
8
7
6
5
相關(guān)PDF資料
PDF描述
AH115-S8 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115-S8 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH116-S8G 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AH115-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC
AH115-S8PCB1960 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH115-S8PCB2140 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH115-S8TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH116 制造商:未知廠家 制造商全稱:未知廠家 功能描述:InGaP HBT Amplifiers
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