參數(shù)資料
型號： AH115-S8
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝： PLASTIC, SMT, MS-012, SOIC-8
文件頁數(shù)： 1/7頁
文件大?。?/td> 638K
代理商： AH115-S8
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 7
September 2005
AH115 / ECP050G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
1800 – 2300 MHz
+28.5 dBm P1dB
+44 dBm Output IP3
14 dB Gain @ 1960 MHz
+5V Single Positive Supply
MTTF > 100 Years
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH115 / ECP050G is a high dynamic range driver
amplifier in a low-cost surface mount package.
The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050G is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050G to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications
(1)
Parameters
Units
Min
Typ
Max
Operational Bandwidth
MHz
1800
2300
Test Frequency
MHz
2140
Gain
dB
12.5
14.4
Input Return Loss
dB
23
Output Return Loss
dB
8
Output P1dB
dBm
+26.5
+28.5
Output IP3
(2)
dBm
+41
+42
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
dBm
+22.5
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
dBm
+20
Noise Figure
dB
5.3
Operating Current Range
(3)
mA
200
250
300
Device Voltage
V
+5
1. Test conditions unless otherwise noted. 25C, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-65 to +150
°C
RF Input Power (continuous)
+22 dBm
Device Voltage
+8 V
Device Current
400 mA
Device Power
2 W
Junction Temperature
+250
°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameters
Units
Typical
Frequency
MHz
1960
2140
Gain
dB
14.3
14.4
S11
dB
-12
-23
S22
dB
-8
Output P1dB
dBm
+28.3
+28.5
Output IP3
(2)
dBm
+44
+42
IS-95A Channel Power
@ -45 dBc ACPR,
dBm
+22.5
wCDMA Channel Power
@ -45 dBc ACLR
dBm
+20
Noise Figure
dB
5
5.3
Supply Bias
+5 V @ 250 mA
4. Typical parameters reflect performance in a tuned application circuit at +25
° C.
Ordering Information
Part No.
Description
AH115-S8*
Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
ECP050G*
Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
AH115-S8G
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH115-S8PCB1960
1960 MHz Evaluation Board
AH115-S8PCB2140
2140 MHz Evaluation Board
*
This package is being phased out in favor of the green package type which is backward
compatible for existing designs.
1
2
3
4
8
7
6
5
相關(guān)PDF資料
PDF描述
AH115-S8 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH116-S8G 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH116-S8G 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AH115-S8G 功能描述:射頻放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AH115-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC
AH115-S8PCB1960 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH115-S8PCB2140 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH115-S8TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
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