參數(shù)資料
型號(hào): AH114-89G
英文描述:  Watt, High Linearity InGaP HBT Amplifier
中文描述: 瓦,高線性InGaP HBT功率放大器
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 283K
代理商: AH114-89G
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 6 November 2006
AH114
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
2140 MHz Application Circuit (AH114-89PCB2140)
Typical RF Performance
Frequency
S21
Gain
S11
Input Return Loss
S22
Output Return Loss
Output IP3
(+11 dBm / tone, 1 MHz spacing)
Output P1dB
Noise Figure
Supply Voltage
Supply Current
Measured parameters were taken at 25
C.
2140 MHz
14 dB
-25 dB
-20 dB
+40 dBm
+23 dBm
6.0 dB
+5 V
150 mA
CAP
C=56 pF
CAP
ID=C5
C=56 pF
IND
ID=L1
L=15 nH
RES
ID=R1
CAP
ID=C6
C=1.5 pF
CAP
ID=C9
DIODE1
ID=D1
CAP
C=1.5 pF
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=1000 pF
CAP
size 1206
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
All passive components are of size 0603 unless otherwise noted.
39
° @ 2.14GHz from pin 3.
The capacitor should be placed
screen marker "6" on the WJ evaluation board.
C9 should be placed at the silk
33
° @ 2.14GHz from pin 1.
The capacitor should be placed
screen marker "F" on the WJ evaluation board.
C6 should be placed at the silk
from pin 1 of the AH114.
L2 should be placed 19.5
° @ 2.14GHz
1.9
2
2.1
2.2
2.3
Frequency (GHz)
Application Circuit: 2140 MHz
-25
-20
-15
-10
-5
0
5
10
15
M
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
W-CDMA ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH,
±5 MHz offset
-60
-55
-50
-45
-40
-35
12
13
14
15
16
Output Channel Power (dBm)
A
freq = 2140 MHz
70 MHz Reference Design
Typical RF Performance
Frequency
S21
Gain
S11
Input Return Loss
S22
Output Return Loss
Output IP3
(+11 dBm / tone, 1 MHz spacing)
Output P1dB
Noise Figure
Supply Voltage
Supply Current
Measured parameters were taken at 25
C.
70 MHz
23.4 dB
-15 dB
-14 dB
+44.5 dBm
+23.8 dBm
6.5 dB
+5 V
150 mA
CAP
C=1000 pF
CAP
C=1e7 pF
CAP
CAP
CAP
C=1000 pF
IND
RES
CAP
C=68 pF
IND
L=56 nH
IND
L=33 nH
RES
R=3.9 Ohm
SUBCKT
NET="AH114"
PORT
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
40
50
60
70
80
90
100
Frequency (MHz)
Measured Gain
20
22
24
26
G
DB(|S[2,1]|)
40
50
60
70
80
90
100
Frequency (MHz)
Measured Return Loss
-25
-20
-15
-10
-5
0
R
DB(|S[1,1]|)
DB(|S[2,2]|)
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