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參數(shù)資料
| 型號： | AGR21180EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 227K |
| 代理商： | AGR21180EF |
2
Agere Systems Inc.
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
April 2004
AGR21180EF
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135.0 MHz, and f2 = 2145 MHz.
VDD =28 Vdc, IDQ = 2 x 800 mA, and POUT = 38 W average.
Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =300 A)
V(BR)DSS
65
——
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
6Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
18
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—
12
—
S
Gate Threshold Voltage (VDS =10V, ID =600 A)
VGS(TH)
2.8
3.4
4.0
Vdc
Gate Quiescent Voltage (VDS =28 V, ID =2 x 800 mA)
VGS(Q)
3.0
3.7
4.6
Vdc
Drain-source On-voltage (VGS =10V, ID =1 A)
VDS(ON)
—
0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f= 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
—
4.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain*
GPS
13
14
—
dB
Drain Efficiency*
η
23
26
—
%
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
IM3
—–36
–33
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—–39
–36
dBc
Input Return Loss*
IRL
—–13
–10
dB
Power Output, 1 dB Compression Point, pulsed 4 s at 10% duty.
(VDD =28 V, fC = 2140.0 MHz)
P1dB
160
200
—
W
Output Mismatch Stress
(VDD =28 V, POUT = 180 W (pulsed 4 s at 10% duty),
IDQ =2 x 800mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles])
ψ
No degradation in output
power.
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