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參數(shù)資料
| 型號： | AGR21010EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 504K |
| 代理商： | AGR21010EU |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR21010E
April 2003
10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 6. dc Characteristics, 1930 MHz—1990 MHz
Table 7. RF Characteristics, 1930 MHz—1990 MHz
1. Across band, 1930 MHz—1990 MHz.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =25 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0 V)
IGSS
——
0.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS =26V, VGS =0 V)
IDSS
——
0.9
Adc
On Characteristics
Forward Transconductance (VDS =10V, ID =1A)
GFS
—0.65
—
S
Gate Threshold Voltage (VDS =10 V, ID =43A)
VGS(TH)
—
3.3
4.8
Vdc
Gate Quiescent Voltage (VDS =26V, ID = 100 mA)
VGS(Q)
—3.7
—
Vdc
Drain-source On-voltage (VGS =10V, ID =0.5 A)
VDS(ON)
—0.56
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28 V, VGS =0, f = 1.0MHz)
CRSS
—0.3
—
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
COSS
—5.0
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
CISS
—
18.2
—
pF
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain
(VDS = 28 V, POUT = 5 W, IDQ = 100 mA)
GPS
—16
—
dB
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 100 mA)
η
—58
—
%
Output Power
(VDS = 28 V, 1 dB gain compression, IDQ = 100 mA)
P1dB
10
11
—
W
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 10 WPEP, IDQ = 100 mA)
IM3
—
–32
—
dBc
Input Return Loss
IRL
–10
—
dB
Ruggedness
(VDS = 28 V, POUT = 10 W, IDQ = 100 mA, VSWR = 10:1, all
angles)
ψ
No degradation in output power.
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