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參數(shù)資料
| 型號： | AGR21010EU |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SURFACE MOUNT PACKAGE-2 |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 504K |
| 代理商： | AGR21010EU |
Preliminary Data Sheet
April 2003
AGR21010E
10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21010E is a broadband general-purpose,
high-voltage, gold-metalized, laterally diffused metal
oxide semiconductor (LDMOS) RF power transistor
suitable for cellular, personal communications sys-
tem (PCS), digital communication system (DCS), and
universal mobile telecommunication system (UMTS)
base station power amplifier applications with fre-
quencies up to 2600 MHz. The AGR21010E is also
suitable for GSM/EDGE, time division multiple
access (TDMA), code division multiple access
(CDMA), wideband code division multiple access
(WCDMA), single and multicarrier applications.
Figure 1. AGR21010EU Package
Features
s
Continuous wave (CW) performance characterized
in frequency 921 MHz to 960 MHz band @ 26 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 21 dB.
— Efficiency: 61% @ P1dB.
— Edge ACP @ 2 W.
— Return loss: –12 dB.
s
CW performance characterized in frequency
1930 MHz to 1990 MHz band @ 28 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 16 dB.
— Efficiency: 58% @ P1dB.
— IM3: –32 dBc, 10 W PEP.
— Return loss: –10 dB.
s
CW performance characterized in frequency
2110 MHz to 2170 MHz band @ 28 V:
— Output power: 10 W minimum @ P1dB.
— Power gain: 15 dB.
— Efficiency: 57% @ P1dB.
— IM3: –31 dBc, 10 W PEP.
— Return loss: –10 dB.
s
High-reliability gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) with 10 W CW output power.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC’s JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR21010EUR
θJC
4.5
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C
AGR21010EU
PD
38.9
W
Derate Above 25
°C
AGR21010EU
—
0.22
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
Device
Minimum
Threshold
Class
HBM
CDM
HBM
CDM
AGR21010E
—
1
TBD
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