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參數資料
| 型號： | AGR19180EF |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-4 |
| 文件頁數： | 6/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | AGR19180EF |
Agere Systems Inc.
5
Preliminary Data Sheet
AGR19180EF
April 2004
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
ZS = Test circuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f)
ZS
(Complex Source Impedance)
ZL
(Complex Optimum Load Impedance)
1930 (f1)
2.58 – j5.9
3.2 – j4.67
1960 (f2)
2.36 – j5.26
2.85 – j3.86
1990 (f3)
2.37 – j4.51
2.72 – j3.07
0.1
0.2
0.3
0.4
0.5
0.6
0
.7
0.7
0
.8
0.8
0
.9
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180±
90
-90
-8
5
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.0
4
0.05
0.0
6
0.0
7
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.1
7
0.1
8
0.1
9
0.2
1
0.2
2
0.23
0.24
0.25
0.26
0.27
0.28
0.2
9
0.3
1
0.3
2
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.4
2
0.43
0.4
4
0.45
0.4
6
0.4
7
0.48
0.49
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
IS
S
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
A
N
G
L
E
O
F
R
E
F
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C
T
IO
N
C
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F
IC
IE
N
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IN
D
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>
W
A
V
E
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T
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W
A
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A
V
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T
H
S
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W
A
R
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<
IN
D
U
C
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CA
PA
CIT
IV
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AN
CE
CO
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EN
T
(-j
X/
Zo
),
O
R
IN
D
U
C
T
IV
E
SU
SC
E
P
T
A
N
C
E
(-
jB
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
ZL
f3
f1
ZS
f3
f1
Z0 = 10
DUT
INPUT MATCH
OUTPUT MATCH
–
+
ZS
ZL
+
–
DRAIN (1)
SOURCE (3)
GATE (2)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AGR19K180EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21030EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR21060E | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21060EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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