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參數(shù)資料
| 型號： | AGR19125EF |
| 廠商： | LSI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | FM-2 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 225K |
| 代理商： | AGR19125EF |
2
Agere Systems Inc.
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
April 2004
AGR19125E
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
VDD =28 Vdc, IDQ = 1250 mA, and POUT = 24 W avg.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =200 A)
V(BR)DSS
65
——
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
4Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
12
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—
9
—
S
Gate Threshold Voltage (VDS =10V, ID =400 A)
VGS(TH)
——
4.8
Vdc
Gate Quiescent Voltage (VDS =28 V, ID = 1200 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS =10V, ID =1 A)
VDS(ON)
—
0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f= 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
—
3.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain*
GPS
14
15
—
dB
Drain Efficiency*
η
—
24
—
%
Third-order Intermodulation Distortion*
(IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz
and f2 + 2.5 MHz)
IM3
—–34
—
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz
and f2 + 0.885 MHz)
ACPR
—–48
—
dBc
Input Return Loss*
IRL
—–10
—
dB
Power Output, 1 dB Compression Point
(VDD =28 V, fC = 1960.0 MHz)
P1dB
—
125
—
W
Output Mismatch Stress
(VDD =28 V, POUT = 125 W (CW), IDQ =1250mA, fC = 1960.0 MHz
VSWR = 10:1; [all phase angles])
ψ
No degradation in output power.
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