參數(shù)資料
型號(hào)： AGR09030GUM
廠商： LSI CORP
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： PLASTIC PACKAGE-2
文件頁數(shù)： 3/7頁
文件大?。?/td> 245K
代理商： AGR09030GUM
Agere Systems Inc.
3
Preliminary Data Sheet
AGR09030GUM
August 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09030GUM
A. Schematic
B. Component Layout
Figure 2. AGR09030GUM Test Circuit
Parts List:
■
Murata chip capacitor:
C12, C23: 0.01 F
GRM40X7R103K100AL.
■
0603 chip capacitor:
C10, C22: 220 pF.
■
Sprague tantalum
chip capacitor:
C14, C15, C25:
22 F, 35 V.
■
Kreger
ferrite bead:
FB1 2743D19447.
■
Kemet chip capacitor:
C13, C24 0.10 F
C1206C104KRAC7800.
■
Vitramon chip
capacitor:
C11, C22: 2200 pF,
VJ1206Y222KXA.
■
Taconic ORCER RF-
35: board material, 1 oz.
copper, 30 mil thickness,
εr = 3.5.
■
Microstrip line: Z1 0.334 in. x 0.066 in.; Z2 0.042 in. x 0.066 in.; Z3 0.344 in. x 0.050 in.; Z4 0.045 in. x 0.066 in.; Z5 0.074 in. x 0.066 in.;
Z6 0.920 in. x 0.066 in.; Z7 0.050 in. x 0.066 in.; Z8 0.226 in. x 0.066 in.; Z9 0.785 in. x 0.150 in.; Z10 0.050 in. x 0.600 in.;
Z11 0.499 in. x 0.600 in.; Z12 0.050 in. x 0.600 in.; Z13 1.024 in. x 0.050 in.; Z14 0.180 in. x 0.500 in.; Z15 0.050 in. x 0.500 in.;
Z16 0.534 in. x 0.500 in.; Z17 0.050 in. x 0.500 in.; Z18 0.675 in. x 0.100 in.; Z19 0.050 x 0.066; Z20 0.507 in. x 0.066 in.;
Z21 0.891 in. x 0.066 in.; Z22 2.048 in. x 0.050 in.
■
ATC chip capacitor: C1: 8.2 pF 100A8R2JW; C2: 47 pF 100A470JW; C3, C8, C18, C19: 47 pF 100B470JW; C4: 3.0 pF 100B3R0BW;
C5: 3.9 pF 100A3R9JW; C6, C7: 12 pF 100B120JW; C9, C20: 10 pF 100B100JW; C16: 9.1 pF 100B9R1JW; C17: 4.7 pF 100B4R7JW.
■
1206 size, 0.25 W, fixed film, chip resistors: R1: 51
, RM73B2B510J; R2: 47 k, RM73B2B473J; R3: 1 k, RM73B2B102J.
■
0805 size, 0.25 W, fixed film, chip resistor: R4: 10
, RK73H2A10R0F.
Z9
Z10
DUT
C14
R1
C13
C12
FB1
Z14
C22
C21
C20
C19
C25
C24
+
C23
RF INPUT
VGG
VDD
C11
C10
C9
C8
C4
Z12
C6
C7
Z21
C18
Z20
Z19
Z16
Z17
RF OUTPUT
C16
Z18
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z13
C15
R2
R3
++
C3
Z6
Z7
C2
Z4
Z5
R4
C1
Z3
Z1
Z2
Z11
Z15
Z22
C5
Z8
C17
相關(guān)PDF資料
PDF描述
AGR09045EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09045EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09045EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09045EU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09045GUM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGR09045E 制造商:PEAK 制造商全稱:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR09045EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045WEF 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR09070EF 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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