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參數(shù)資料
| 型號： | AGR09030GUM |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 245K |
| 代理商： | AGR09030GUM |
Agere Systems Inc.
7
Preliminary Data Sheet
AGR09030GUM
August 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, frequency = 880 MHz, TC = 30 °C. Waveform = CW.
Figure 8. Power Gain vs. Power Out
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, F1 = 880 MHz, F2 = 880.1 MHz, TC = 30 °C.
Figure 9. Third-order Intermodulation Distortion vs. Power Out
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
0
2
4
6
8
10
12
14
16
18
20
22
POUT (W)Z
PO
W
E
R
G
A
IN
(
d
B)
Z
IDQ = 170 mA
IDQ = 500 mA
IDQ = 410 mA
IDQ = 330 mA
IDQ = 250 mA
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48
OUTPUT POWER (WPEP)Z
IMD
(
d
Bc)
Z
IM5-
IM5+
IM7-
IM7+
IM3-
IM3+
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| AGR09030GUM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AGR09045E | 制造商:PEAK 制造商全稱:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045WEF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09070EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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