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參數(shù)資料
| 型號： | AGR09030GUM |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 245K |
| 代理商： | AGR09030GUM |
6
Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
August 2004
AGR09030GUM
Preliminary Data Sheet
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, TC = 30 °C. Waveform = CW.
Figure 6. Power Gain vs. Power Out
Test Conditions:
VDD = 28 Vdc, IDQ = 330 mA, TC = 30 °C. Waveform = CW.
Figure 7. Power Out and Drain Efficiency vs. Input Power
14
15
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17
18
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20
5
10
15
20
25
30
35
40
45
50
55
POUT (W)Z
PO
W
E
R
G
A
IN
(
d
B)
Z
865 MHz
880 MHz
895 MHz
0
5
10
15
20
25
30
35
40
45
50
55
60
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
PIN (W)Z
P
OUT
(W)
Z
20
30
40
50
60
70
80
90
100
110
120
130
140
DRA
IN
E
F
ICI
E
NCY
(%
)Z
865 MHz
880 MHz
895 MHz
POUT
895 MHz
880 MHz
865 MHz
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| AGR09030GUM | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| AGR09045E | 制造商:PEAK 制造商全稱:PEAK electronics GmbH 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09045EF | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| AGR09045EU | 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
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| AGR09070EF | 功能描述:射頻MOSFET電源晶體管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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