2-38 Revision 16 1.2 V LVCMOS (JESD8-12A) Low-Voltage CMOS for 1.2 V complies with the LVCMOS s" />
參數(shù)資料
型號： AGLP060V5-VQG176I
廠商： Microsemi SoC
文件頁數(shù)： 83/134頁
文件大小： 0K
描述： IC FPGA IGLOO PLUS 60K 176-VQFN
標(biāo)準(zhǔn)包裝： 60
系列： IGLOO PLUS
邏輯元件/單元數(shù)： 1584
RAM 位總計： 18432
輸入/輸出數(shù)： 137
門數(shù)： 60000
電源電壓： 1.425 V ~ 1.575 V
安裝類型： 表面貼裝
工作溫度： -40°C ~ 85°C
封裝/外殼： 176-TQFP
供應(yīng)商設(shè)備封裝： 176-VQFP（20x20）
IGLOO PLUS DC and Switching Characteristics
2-38
Revision 16
1.2 V LVCMOS (JESD8-12A)
Low-Voltage CMOS for 1.2 V complies with the LVCMOS standard JESD8-12A for general purpose 1.2 V
applications. It uses a 1.2 V input buffer and a push-pull output buffer.
Timing Characteristics
Applies to 1.2 V DC Core Voltage
Table 2-64 Minimum and Maximum DC Input and Output Levels
1.2 V
LVCMOS1
VIL
VIH
VOL
VOH
IOL IOH
IOSL
IOSH
IIL2 IIH3
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmA mA
Max.
mA4
Max.
mA4
A5 A5
2 mA
–0.3 0.35 * VCCI 0.65 * VCCI
3.6
0.25 * VCCI 0.75 * VCCI 2
2
20
26
10 10
Notes:
1. Applicable to IGLOO nano V2 devices operating at VCCI
VCC.
2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
4. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
5. Currents are measured at 85°C junction temperature.
6. Software default selection highlighted in gray.
Figure 2-11 AC Loading
Table 2-65 AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V)
Input High (V)
Measuring Point* (V)
CLOAD (pF)
01.2
0.6
5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-21 for a complete table of trip points.
Test Point
Enable Path
Datapath
5 pF
R = 1 k
R to VCCI for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
5 pF for tZH / tZHS / tZL / tZLS
5 pF for tHZ / tLZ
Table 2-66 1.2 V LVCMOS Low Slew
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V
Drive Strength
Speed Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
2 mA
STD
0.98
8.27 0.19 1.57
2.34
0.67
7.94 6.77 3.00 3.11
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-67 1.2 V LVCMOS High Slew
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V
Drive Strength
Speed Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
2 mA
STD
0.98
3.38 0.19 1.57
2.34
0.67
3.26 2.78 2.99 3.24
ns
Notes:
1. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
2. Software default selection highlighted in gray.
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