參數(shù)資料
型號(hào): AFM04P2-000
廠商: Alpha Industries, Inc.
英文描述: Ka Band Power GaAs MESFET Chip
中文描述: Ka波段功率GaAs MESFET芯片
文件頁(yè)數(shù): 3/3頁(yè)
文件大?。?/td> 43K
代理商: AFM04P2-000
Parameter
BETA
V
PO
U
GAMA
Q
NG
ND
DELT
ALFA
T
C
GSO
C
GDO
V
BI
IS
N
IBO
NR
V
BD
RG
RD
RS
LG
LD
LS
CDS
RDSD
CDSD
CGE
CDE
Description
Unit
A/V
2
V
/V
Default
0.09464
-1.8760
0.3599
0.03458
1.6560
0.6025
0.6050
0.5633
1.9400
6.4330
0.4232
0.03138
1.200
0.563e-12
1.1000
1.000e-16
10.0
20.00
1.0000
2.0000
0.8000
0.5572
0.2279
0.03532
0.1555
107.99
12.03
7.7240
9.4390
Transconductance Coefficient
Pinch-off voltage
Mobility degradation fitting parameter
Slope parameter of pinch-off voltage
Power law parameter
Subthreshold slope gate parameter
Subthreshold slope drain parameter
Slope of drain characteristics in the saturated region
Slope of drain characteristics in the linear region
Channel transmit-time delay
Gate-source Schottky barrier capacitance at V
GS
= 0
Gate-drain Schottky barrier capacitance at V
GS
= 0
Built-in barrier potential
Diode saturation current
Diode ideality factor
Breakdown saturation current
Breakdown ideality factor
Breakdown voltage
Gate terminal resistance
Drain terminal resistance
Source terminal resistance
Gate lead inductance
Drain lead inductance
Source lead inductance
Drain-source capacitance
Channel trapping resistance
Low frequency trapping resistance
Gate-source electrode capacitance
Drain-source electrode capacitance
/A, V
/V
pS
pF
pF
V
A
A
V
nH
nH
nH
pF
nF
fF
fF
Ka Band Power GaAs MESFET Chip
AFM04P2-000
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
3
Power Derating
0
0.25
0.50
0.75
1.00
0
50
100
T
BASE
(C)
150
200
T
T
I-V
0
30
60
90
120
150
0
1
2
3
5
4
-0.5 V
-1.0 V
-1.5 V
-2.0 V
-2.5 V
V
DS
(V)
l
D
V
GS
= 0 V
Typical Performance Data
TOM-2 Model Parameters
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