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參數(shù)資料
| 型號： | AFM06P3-212 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | Ka Band Power GaAs MESFET Chips |
| 中文描述： | Ka波段功率GaAs MESFET芯片 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 25K |
| 代理商： | AFM06P3-212 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
Ka Band Power GaAs MESFET Chips
Features
I
22 dBm Output Power @ 18 GHz
I
High Associated Gain, 9 dB @ 18 GHz
I
High Power Added Efficiency, 23%
I
Broadband Operation, DC–18 GHz
I
0.25
μ
m Ti/Pd/Au Gates
I
Passivated Surface
Description
The AFM06P3-212, 213 are high performance power
GaAs MESFET chips in an industry standard ceramic
micro-x package, having a gate length of 0.25
μ
m and a
total gate periphery of 600
μ
m. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits.They
employ Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
AFM06P3-212, AFM06P3-213
Parameter
Test Conditions
Min.
130.0
90.0
1.0
8.0
Typ.
200.0
120.0
3.0
12.0
Max.
270.0
Unit
mA
mS
V
V
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-Off Voltage (V
P
)
Gate to Drain Breakdown
Voltage (V
bgd
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (
η
add)
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1.5 mA
I
GD
= 600
μ
A
5.0
22.0
dBm
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
23.0
dB
%
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
6 V
-4 V
I
DSS
1 mA
1.1 W
-65 to +150°C
175°C
Absolute Maximum Ratings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AFM06P3-213 | Ka Band Power GaAs MESFET Chips |
| AFM08P2-000 | Ka Band Power GaAs MESFET Chip |
| AFP02N8-212 | General Purpose Packaged PHEMT Chips |
| AFP02N8-213 | LJT 32C 32#20 PIN PLUG |
| AFP02N8-000 | Circular Connector; No. of Contacts:11; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:19-11 RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AFM06P3-213 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Ka Band Power GaAs MESFET Chips |
| AFM08P2-000 | 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Ka Band Power GaAs MESFET Chip |
| AFM1.0 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ADAPTIVE FUZZY MODELLER |
| AFM10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ADAPTIVE FUZZY MODELLER |
| AFM10-301-M | 制造商:American Electronic Components Inc 功能描述:MERCURY DISP CONTACTOR SPST-NO |
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