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參數(shù)資料
| 型號(hào)： | ADT50 |
| 廠商： | Analog Devices, Inc. |
| 元件分類： | 溫度/濕度傳感器 |
| 英文描述： | Low Voltage SOT-23 Temperature Sensors(低壓溫度傳感器) |
| 中文描述： | 低壓SOT - 23封裝溫度傳感器（低壓溫度傳感器） |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 168K |
| 代理商： | ADT50 |
ADT45/ADT50
–3–
REV. 0
FUNCT IONAL DE SCRIPT ION
An equivalent circuit for the ADT 45/ADT 50 of micropower centi-
grade temperature sensors is shown in Figure 1. At the heart of the
temperature sensor is a bandgap core comprised of transistors Q1
and Q2, biased by Q3 to approximately 8
μ
A. T he bandgap core
operates both Q1 and Q2 at the same collector current level;
however, since the emitter area of Q1 is 10 times that of Q2,
Q1’s V
BE
and Q2’s V
BE
are not equal by the following relationship:
V
BE
=
V
T
×
ln
A
E
,
Q
1
A
E
,
Q
2
+V
S
V
OUT
Q4
Q1
10X
Q2
1X
25
m
A
3X
2X
R1
R2
R3
7.5
m
A
Q3
2X
6X
GND
Figure 1. Temperature Sensor Simplified Equivalent Circuit
ORDE RING GUIDE
Accuracy
at +25
8
C
(
8
C max)
Linear Operating
T emperature
Range
Package
Option*
Model
ADT 45GRT
ADT 50GRT
6
3.0
6
3.0
0
°
C to +100
°
C
–40
°
C to +125
°
C
RT -3
RT -3
*RT = Surface Mount.
PIN CONFIGURAT ION
3
GND
1
2
TOP VIEW
(Not to Scale)
+V
S
V
OUT
Resistors R1 and R2 are used to scale this result to produce the
output voltage transfer characteristic of each temperature sensor
and, simultaneously, R2 and R3 are used to scale Q1’s V
BE
as
an offset term in V
OUT
. T able I summarizes the differences
between the two temperature sensors’ output characteristics:
T able I. ADT 45/ADT 50 Output Characteristics
Offset
Voltage (V)
Output Voltage
Scaling (mV/
8
C)
Output Voltage
@ +25
8
C
Sensor
ADT 45
ADT 50
0
0.5
10
10
250 mV
750 mV
T he output voltage of the temperature sensor is available at the
emitter of Q4, which buffers the bandgap core and provides load
current drive. Q4’s current gain, working with the available base
current drive from the previous stage, sets the short-circuit current
limit of these devices to 250
μ
A.
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