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參數(shù)資料
| 型號： | ADP3522 |
| 廠商： | Analog Devices, Inc. |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | GSM Power Management System |
| 中文描述： | 手機電源管理系統(tǒng) |
| 文件頁數(shù)： | 13/20頁 |
| 文件大?。?/td> | 467K |
| 代理商： | ADP3522 |
REV. 0
ADP3522
–13–
Digital Core LDO (VCORE)
The digital core LDO supplies the baseband circuitry in the
handset (baseband processor and baseband converter). The
LDO has been optimized for very low quiescent current at light
loads as this LDO is on whenever the handset is switched on.
Memory LDO (VMEM)
The memory LDO supplies the system memory as well as the
subsystems of the baseband processor including memory IO,
display, and melody interfaces. It is capable of delivering up to
150 mA of current and is available for either 1.8 V or 3 V based
systems. The LDO has also been optimized for low quiescent
current and will power up at the same time as the core LDO.
Analog LDO (VAN)
This LDO has the same features as the core LDO. It has fur-
thermore been optimized for good low frequency ripple
rejection for use with the baseband converter sections in order
to reject the ripple coming from the RF power amplifier. VAN is
rated to 180 mA, which is sufficient to supply the analog section
of the baseband converter, such as the AD6521, as well as the
microphone and speaker.
TCXO LDO (VTCXO)
The TCXO LDO is intended as a supply for a temperature
compensated crystal oscillator, which needs its own ultralow
noise supply. VTCXO is rated for 20 mA of output current and
is turned on along with the analog LDO when TCXOEN is
asserted. Note that the ADP3522 has been optimized for use
with the AD6534 (Othello One).
RTC LDO (VRTC)
The RTC LDO is capable of charging rechargeable Lithium or
capacitor-type backup coin cells to run the real-time clock mod-
ule. The RTC LDO supplies current both for charging the coin
cell and for the RTC module. In addition, it features a very low
quiescent current since this LDO is running all the time, even
when the handset is switched off. It also has reverse current
protection with low leakage, which is needed when the main
battery is removed and the coin cell supplies the RTC module.
SIM LDO (VSIM)
The SIM LDO generates the voltage needed for 1.8 V or 3 V
SIMs. It is rated for 20 mA of supply current and can be con-
trolled completely independently of the other LDOs.
Applying a low to SIMEN shuts down the SIM LDO. A dis-
charge circuit is active when SIMEN is low. This pulls the SIM
LDO’s output down when the LDO is disabled.
SIMVSEL allows the SIM LDO to be programmed for either
1.8 V or 2.8 V. Asserting a high on SIMVSEL sets the output
for 2.8 V.
SIMEN and SIMVSEL allow the baseband processor to prop-
erly sequence the SIM supply when determining which type of
SIM module is present.
Reference Output (REFOUT)
The reference output is a low noise, high precision reference
with
a guaranteed accuracy of 1.5% overtemperature. The
maximum
output current of the REFOUT supply is limited to 50
μ
A.
Power ON/OFF
The ADP3522 handles all issues regarding the powering ON
and OFF of the handset. It is possible to turn on the ADP3522
in three different ways:
Pulling the
PWRONKEY
low
Pulling the PWRONIN high
CHRIN exceeds CHRDET threshold
Pulling the
PWRONKEY
low is the normal way of turning on the
handset. This will turn on all the LDOs, except the SIM LDO, as
long as the
PWRONKEY
is held low. When the VCORE LDO
comes into regulation, the
RESET
timer is started. After timing
out, the
RESET
pin goes high, allowing the baseband processor to
start up. With the baseband processor running, it can poll the
ROWX
pin of the ADP3522 to determine if the
PWRONKEY
has
been depressed and pull PWRONIN high. Once the PWRONIN is
taken high, the
PWRONKEY
can be released. Note that by moni-
toring the
ROWX
pin, the baseband processor can detect a second
PWRONKEY
and press and turn the LDOs off in an orderly manner.
In this way, the
PWRONKEY
can be used for ON/OFF control.
Pulling the PWRONIN pin high is how the alarm in the real-
time clock module will turn the handset on. Asserting
PWRONIN will turn the core and memory LDOs on, starting
up the baseband processor.
1.6
3.5
4.0
1.2
1.8
4.5
5.0
3.0
P
1.4
0.8
0.4
1.0
0.6
5.5
6.0
0.2
0
INPUT VOLTAGE – V
ADP3522-1.8
ADP3522-2.8
Figure 3.
Power Dissipation vs. Input Voltage
1.6
0
20
1.2
1.8
40
60
–20
P
1.4
0.8
0.4
1.0
0.6
80
0.2
0
AMBIENT TEMPERATURE – C
LFCSP
32 C/W
Figure 4.
Allowable Package Power Dissipation
vs. Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADP3522ACP-1.8 | GSM Power Management System |
| ADP3522ACP-3 | GSM Power Management System |
| ADP3604 | |
| ADP3604AR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.45V) 8-SM8 -40 to 110 |
| ADP3604* | Dual/Quad Rail-to-Rail Output, Picoamp Input Precision Op Amps; Package: SO; No of Pins: 8; Temperature Range: -40°C to +85°C |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3522ACP-1.8 | 制造商:AD 制造商全稱:Analog Devices 功能描述:GSM Power Management System |
| ADP3522ACP-1.8-RL | 制造商:Analog Devices 功能描述:GSM Power Management System 32-Pin LFCSP EP T/R |
| ADP3522ACP-1.8-RL7 | 制造商:Analog Devices 功能描述:GSM Power Management System 32-Pin LFCSP EP T/R |
| ADP3522ACP-3 | 制造商:AD 制造商全稱:Analog Devices 功能描述:GSM Power Management System |
| ADP3522ACP-3-REEL | 制造商:Analog Devices 功能描述:GSM Power Management System 32-Pin LFCSP EP T/R |
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