- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374022 > ADP3510ARU (ANALOG DEVICES INC) Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 PDF資料下載
參數(shù)資料
| 型號： | ADP3510ARU |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 電源管理 |
| 英文描述： | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO28 |
| 封裝： | TSSOP-28 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 283K |
| 代理商： | ADP3510ARU |
REV. 0
ADP3510
–4–
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
BATTERY VOLTAGE DIVIDER
Divider Ratio
Divider Impedance at MVBAT
Divider Leakage Current
Divider Resistance
BATSNS/MVBAT
Z
O
TCXOEN = High
2.94
50
3.00
80
3.06
110
1
430
k
W
m
A
k
W
TCXOEN = Low
TCXOEN = High
230
350
BATTERY CHARGER
Charger Output Voltage
BATSNS
4.5 V < CHRIN < 10 V,
CHGEN = Low,
T
A
= 0
∞
C to 50
∞
C
CHRIN = 10 V, V
SENSE
= 10 mV,
4.162 4.200 4.238
T
A
= 0
∞
C to 50
∞
C
CHRIN = 5 V,
0 < CHRIN – ISENSE
< Current Limit Threshold,
CHGEN = Low
VBAT = 3.6 V
4.158 4.200 4.242
V
Charger Output Voltage
BATSNS
V
Load Regulation
BATSNS
2
8
mV
CHRDET on Threshold
CHRDET Hysteresis
CHRDET Off Delay
3
CHRIN Supply Current
Current Limit Threshold
High Current Limit
(100%: UVLO Not Active)
CHRIN–VBAT
260
70
6
0.6
mV
mV
ms/nF
mA
CHRIN < VBAT
CHRIN = 5 V
1
CHRIN–ISENSE
CHRIN = 5 V dc
VBAT = 3.6 V
CHGEN = Low
CHRIN = 5 V
VBAT = 2 V
CHGEN = Low
CHRIN = 5 V
CHRIN = 5 V dc
VBAT > 4.0 V
CHGEN = Low
CHGEN = Low
CHRIN = 5 V
VBAT > 3.6 V
CHGEN = High, C
L
= 2 nF
CHRIN = 5 V
VBAT = 3.6 V
CHGEN = High
GATEIN = High
I
OH
= –1 mA
CHRIN = 5 V
VBAT = 3.6 V
CHGEN = High
GATEIN = Low
I
OL
= +1 mA
I
OH
= –250
m
A
150
172
195
mV
Low Current Limit
(10%: UVLO Active)
2
15
30
mV
ISENSE Bias Current
End of Charge Signal Threshold
180
12
250
26
m
A
mV
CHRIN–ISENSE
2
End of Charge Reset Threshold
GATEDR Transition Time
VBAT
t
R
, t
F
3.82
1
3.96
4.10
10
V
m
s
GATEDR High Voltage
V
OH
4.5
V
GATEDR Low Voltage
V
OL
0.5
V
Output High Voltage
(EOC, CHRDET)
Output Low Voltage
(EOC, CHRDET)
Battery Overvoltage
Protection Threshold
(GATEDR
High)
Battery Overvoltage
Protection Hysteresis
V
OH
2.4
V
V
OL
I
OL
= +250
m
A
0.25
V
BATSNS
CHRIN = 7.5 V
CHGEN = High
GATEIN = Low
CHRIN = 7.5 V
CHGEN = High
GATEIN = Low
5.30
5.50
5.70
V
BATSNS
400
mV
NOTES
1
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
2
This feature is intended to protect against catastrophic failure of the device. Maximum allowed operating junction temperature is 125 C. Operation beyond 125 C could cause
permanent damage to the device.
3
Delay set by external capacitor on the RESCAP pin.
Specifications subject to change without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| ADP3522 | GSM Power Management System |
| ADP3522ACP-1.8 | GSM Power Management System |
| ADP3522ACP-3 | GSM Power Management System |
| ADP3604 | |
| ADP3604AR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.45V) 8-SM8 -40 to 110 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3510ARU-REEL7 | 制造商:Analog Devices 功能描述: |
| ADP3522 | 制造商:AD 制造商全稱:Analog Devices 功能描述:GSM Power Management System |
| ADP3522ACP-1.8 | 制造商:AD 制造商全稱:Analog Devices 功能描述:GSM Power Management System |
| ADP3522ACP-1.8-RL | 制造商:Analog Devices 功能描述:GSM Power Management System 32-Pin LFCSP EP T/R |
| ADP3522ACP-1.8-RL7 | 制造商:Analog Devices 功能描述:GSM Power Management System 32-Pin LFCSP EP T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復。