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參數(shù)資料
| 型號： | ADP3419 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
| 中文描述： | 雙自舉，高電壓MOSFET的輸出驅(qū)動器禁用 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 317K |
| 代理商： | ADP3419 |
ADP3419
PC BOARD LAYOUT CONSIDERATIONS
Use the following general guidelines when designing printed
circuit boards. Figure 18 gives an example of the typical land
patterns based on the guidelines given here.
Rev. A | Page 12 of 16
The VCC bypass capacitor should be located as close as
possible to the VCC and GND pins. Place the ADP3419
and bypass capacitor on the same layer of the board, so
that the PCB trace between the ADP3419 VCC pin and
the MLC capacitor does not contain any via. An ideal
location for the bypass MLC capacitor is near Pin 5 and
Pin 6 of the ADP3419.
High frequency switching noise can be coupled into the
VCC pin of the ADP3419 via the BST diode. Therefore,
do not connect the anode of the BST diode to the VCC
pin with a short trace. Use a separate via or trace to
connect the anode of the BST diode directly to the VCC
5 V power rail.
It is best to have the low-side MOSFET gate close to the
DRVL pin; otherwise, use a short and very thick PCB
trace between the DRVL pin and the low-side MOSFET
gate.
Fast switching of the high-side MOSFET can reduce
switching loss. However, EMI problems can arise due to
the severe ringing of the switch node voltage. Depending
on the character of the low-side MOSFET, a very fast
turn-on of the high-side MOSFET may falsely turn on
the low-side MOSFET through the dv/dt coupling of its
Miller capacitance. Therefore, when fast turn-on of the
high-side MOSFET is not required by the application, a
resistor of about 1 to 2 can be placed between the
BST pin and the BST capacitor to limit the turn-on
speed of the high-side MOSFET.
C
VCC
D1
C
BST
R
BST
SHORT, THICK TRACE
TO THE GATES OF
LOW-SIDE MOSFETS
TO SWITCH
NODE
0
Figure 18. External Component Placement Example
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| ADP3419JRM-REEL | Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
| ADP3419JRMZ-REEL1 | Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP34190091RMZR | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
| ADP3419JRM-REEL | 功能描述:IC MOSFET DVR DUAL BOOTST 10MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:半橋 輸入類型:PWM 延遲時間:25ns 電流 - 峰:1.6A 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動）:118V 電源電壓:9 V ~ 14 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1282 (CN2011-ZH PDF) 其它名稱:*LM5104M*LM5104M/NOPBLM5104M |
| ADP3419JRMZ | 制造商:Analog Device 功能描述: 制造商:Analog Devices 功能描述:MOSFET Driver, Dual, 10 Pin, Plastic, TSSOP |
| ADP3419JRMZ-REEL | 功能描述:功率驅(qū)動器IC DUAL SYNCHRONOUS DRV RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| ADP3419JRMZ-REEL1 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable |
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