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參數(shù)資料
| 型號： | ADP3410KRU |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | MOSFETs |
| 英文描述： | Dual MOSFET Driver with Bootstrapping |
| 中文描述： | 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO14 |
| 封裝： | MO-153AB-1, TSSOP-14 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 148K |
| 代理商： | ADP3410KRU |
REV. 0
ADP3410
–10–
Printed Circuit Board Layout Considerations
Use the following general guidelines when designing printed
circuit boards:
1. Trace out the high-current paths and use short, wide traces
to make these connections.
2. Split the ground connections. Use separate planes for the
signal and power grounds, and tie them together at a single
point near the ADP3410.
3. The VCC
bypass capacitor should be located as close as
possible to VCC
and PGND pins.
Typical Application Circuit
The circuit in Figure 16 shows how the ADP3410 can be com-
bined with the ADP3421 to form a total power conversion solution
for a microprocessor. The combination provides the supply
voltages for the core processor, the I/O interface, and the clock.
VHYS
ADP3421
1
CLSET
2
LTO
3
LTI
4
LTB
5
VID4
6
VID3
7
VID2
8
VID1
9
VID0
10
CLKDRV
11
CLKFB
12
IODRV
13
IOFB
14
SD
15
PWRGD 16
UVLO 17
SSL 18
SSC 19
CORE 20
DACOUT 21
GND 22
OUT 23
VCC 24
RAMP 25
REG 26
CS+ 27
CS– 28
U1
5R1
V
R2
160k
V
3.3V
R10
10k
V
1C2
C3
68
m
F
VRON
2Q2
C14
m
F
M1
D2
OVPSET
ADP3410
SD
GND
IN
DRVLSD
DLY
VCCGD
VCC
DRVL
PGND
SRMON
SW
DRVH
BST
U2
1
2
3
4
5
6
7
14
13
12
11
10
9
8
C20
10
m
F
Q1
CPU
R11
V
R12
470
k
V
C22
C21
C1
C31
1pF
3R16
V
C41
C29
R17
V
R6
7.5
k
V
R5
10
k
V
R18
576
V
1nF
C25
22nF
R21, 10k
V
R19
2
k
V
R15
332
V
R22
100
k
V
1C18
C28
10
m
F
C17
5V
IRM2
R8
2.2
V
R9
V
IRM3
VIN
L1
1
m
H
D1
R
CS
5m
V
C32
C10
10
m
F
C15
10
m
F
C16
10
F
C26, C27
220
m
F
3
7
VCC ON CORE SENSE
V GATE
VCC CPU IO
VCC CPU CLK
CVCC
GND
R20
10
V
Figure 16. Typical Application Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADP3410 | Dual MOSFET Driver with Bootstrapping |
| ADP3412 | Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85 |
| ADP3412JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413 | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
| ADP3413JR | Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.35V) 8-SM8 -40 to 110 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADP3410KRU-REEL | 功能描述:IC MOSFET DVR DUAL N-CH 14TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ADP3410KRU-REEL7 | 功能描述:IC MOSFET DVR DUAL N-CH 14TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ADP3412 | 制造商:AD 制造商全稱:Analog Devices 功能描述:Dual MOSFET Driver with Bootstrapping |
| ADP3412JR | 功能描述:IC MOSFET DVR DUAL N-CH 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ADP3412JR-REEL | 制造商:Rochester Electronics LLC 功能描述:HIGH CURRENT DUAL MOSFET DRIVER - Tape and Reel |
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